SP8J3

Transistors 4V Drive Pch+Pch MOS FET SP8J3 SP8J3 zStructure Silicon P-channel MOS FET zFeatures 1) Low On-resistance. (100mΩ at 4.5V) 2) High Power Package. (PD=2.0W) 3) High speed switching. 4) Low voltage drive. (4V) zApplications Power switching, DC-DC converter zExternal dimensions (Unit : mm) SOP8 5.0 0.4 1.75 (8) (5) 3.9 6.0 0.4Min. 1pin mark (1) 1.27 (4) 0.2 Each lead has same dimensions zPackaging specifications Type SP8J3 Package Code Basic ordering unit (pieces) Taping TB 2500 zInner circuit (8) (7) (6) (5) ∗2 ∗2 ∗1 ∗1 zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Continuous Pulsed Source current (Body diode) Continuous Pulsed Total power dissipation Channel temperature Range of Storage temperature ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD ∗2 Tch Tstg (1) (2) (3) ∗1 ...