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SP8611 Datasheet

Part Number SP8611
Manufacturers SamHop Microelectronics
Logo SamHop Microelectronics
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Datasheet SP8611 DatasheetSP8611 Datasheet (PDF)

Green Product Sa mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor SP8611 Ver 2.1 PRODUCT SUMMARY VDSS 20V ID RDS(ON) (mΩ) Max 12.5 @ VGS=4.5V 13.5 @ VGS=4.0V 8A 14.0 @ VGS=3.7V 15.0 @ VGS=3.1V 18.0 @ VGS=2.5V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. D1 D1 D2 D2 S mini 8 PIN 1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source.

  SP8611   SP8611






Part Number SP8611
Manufacturers Zarlink Semiconductor
Logo Zarlink Semiconductor
Description asynchronous ECL divide
Datasheet SP8611 DatasheetSP8611 Datasheet (PDF)

Obsolescence Notice This product is obsolete. This information is available for your convenience only. For more information on Zarlink’s obsolete products and replacement product lists, please visit http://products.zarlink.com/obsolete_products/ THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS ADVANCE INFORMATION DS3661-1·2 SP8610 1000MHz44 SP8611 1300/1500MHz44 The SP8610 and SP8611 are asynchronous ECL divide by four circuits with ECL compatible outputs.

  SP8611   SP8611







Dual N-Channel Enhancement Mode Field Effect Transistor

Green Product Sa mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor SP8611 Ver 2.1 PRODUCT SUMMARY VDSS 20V ID RDS(ON) (mΩ) Max 12.5 @ VGS=4.5V 13.5 @ VGS=4.0V 8A 14.0 @ VGS=3.7V 15.0 @ VGS=3.1V 18.0 @ VGS=2.5V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. D1 D1 D2 D2 S mini 8 PIN 1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous b IDM -Pulsed a b TA=25°C TA=70°C PD Maximum Power Dissipation TA=25°C TA=70°C TJ, TSTG Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient Limit 20 ±12 8 6.4 48 1.32 0.84 -55 to 150 95 Units V V A A A W W °C °C/W Details are subject to change without notice. 1 Jun,14,2016 www.samhop.com.tw SP8611 Ver 2.1 ELECTRICAL CHARACTERISTICS (TA=25°C unl.


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