Dual N-Channel Enhancement Mode Field Effect Transistor
Description
Green Product
Sa mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor
SP8610
Ver 1.1
PRODUCT SUMMARY
VDSS 20V
ID RDS(ON) (mΩ) Max
9.0 @ VGS=4.5V 9.5 @ VGS=4.0V 13A 10.0 @ VGS=3.7V 10.5 @ VGS=3.1V 11.0 @ VGS=2.5V
FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. ESD Protected...
