SP8255

Green Product Sa mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor SP8255 Ver 1.1 PRODUCT SUMMARY VDSS 20V ID RDS(ON) (mΩ) Max 15.0 @ VGS=4.5V 16.0 @ VGS=4.0V 7A 16.5 @ VGS=3.7V 18.0 @ VGS=3.1V 23.0 @ VGS=2.5V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. DFN 2X5 D1/D2 G2 S2 S2 G1 S1S1 (Bottom view) G1 3 S1 2 S1 1 Bottom Drain Contact 4 G2 5 S2 6 S2 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous a c TA=25°C TA=70°C IDM -Pulsed c PD Maximum Power Dissipation a TA=25°C TA=70°C TJ, TSTG Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient R JC Thermal Resistance, Junction-to-Case Limit 20 ±12 7 5.6 34 1.67 1.07 -55 to 150 75 5.5 Units V V A A A W W °C °C/W °C/W Details are subjec...