Green Product
Sa mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor
SP2108
Ver 1.0
P...
Green Product
Sa mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor
SP2108
Ver 1.0
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Max
100V
1.2A
811 @ VGS=10V 932 @ VGS=4.5V
FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. ESD Protected.
PDFN 5x6
PIN1
D2 5 D2 6 D1 7 D1 8
4 G2 3 S2 2 G1 1 S1
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol VDS VGS
ID
IDM EAS
PD
Parameter Drain-Source
Voltage Gate-Source
Voltage
Drain Current-Continuous c
-Pulsed a c Single Pulse Avalanche Energy d
Maximum Power Dissipation
TA=25°C TA=70°C
TA=25°C TA=70°C
TJ, TSTG
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient
Limit 100 ±20 1.2 0.96
5 4 2.5 1.6
-55 to 150
50
Units V V A A A mJ W W
°C
°C/W
Details are subject to change without notice.
1
Sep,11,2014
www.samhop.com.tw
SP2108
Ver 1.0
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS BVDSS Drain-Source Breakdown
Voltage IDSS Zero Gate
Voltage Drain Current IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA VDS=80V , VGS=0V VGS= ±20V , VDS=0V
100
ON CHARACTERISTICS
VGS(th)
Gate Threshold
Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
SWITCHING CHARACTERISTICS b
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Char...