SP2108

Green Product Sa mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor SP2108 Ver 1.0 PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Max 100V 1.2A 811 @ VGS=10V 932 @ VGS=4.5V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. PDFN 5x6 PIN1 D2 5 D2 6 D1 7 D1 8 4 G2 3 S2 2 G1 1 S1 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Symbol VDS VGS ID IDM EAS PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous c -Pulsed a c Single Pulse Avalanche Energy d Maximum Power Dissipation TA=25°C TA=70°C TA=25°C TA=70°C TJ, TSTG Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient Limit 100 ±20 1.2 0.96 5 4 2.5 1.6 -55 to 150 50 Units V V A A A mJ W W °C °C/W Details are subject to change without notice. 1 Sep,11,2014 www.samhop.com.tw SP2108 Ver 1.0 ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) Symbol Parameter Conditions Min OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body Leakage Current VGS=0V , ID=250uA VDS=80V , VGS=0V VGS= ±20V , VDS=0V 100 ON CHARACTERISTICS VGS(th) Gate Threshold Voltage RDS(ON) Drain-Source On-State Resistance gFS Forward Transconductance SWITCHING CHARACTERISTICS b tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Char...