SOT89

SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 4 – MARCH 2001 COMPLEMENTARY TYPE – BSR43 PARTMARKING DETAILS – ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current m o .c U 4 t e e h S a at .D w w w BR4 IC BSR33 C E C B SOT89 Continuous Collector Current Power Dissipation at T amb =25°C Operating and Storage Temperature Range ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. MAX. UNIT V V V CONDITIONS. I C=-100 µ A I C=-10mA I E =-10 µ A Collector-Base Breakdown Voltage V (BR)CBO V (BR)CEO V (BR)EBO -90 -80 -5 Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current I CBO Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Static Forward Current Transfer Ratio Output Capacitance Input Capacitance Transition Frequency Turn-On Time Turn-Off Time *Measured under pulsed conditions. Spice parameter data is available upon request for this device m o .c U 4 t e e h S a t a .D w m o w .c 4U w t ee SYMBOL V CBO V CEO VALUE -90 -80 -5 -2 -1 1 UNIT V V V EBO I CM V A A P TOT W T j:T stg -65 to +150 °C -100 -50 nA µA V V V V V CB=-60V V CB=-60V, T amb=125°C V CE(sat) V BE(sat) h FE -0.25 -0.5 -1.0 -1.2 300 I C =-150mA, I B=-15mA* I C =-500mA, I B=-50mA* I C=-150mA, I B=-15mA* I C =-500mA, I B=-50mA* I C =-100 µ A, V CE =-5V* I C =-100mA, V CE =-5V* I C =-500mA, V CE =-5V* 30 100 50 C obo C ibo fT 2...