State-of-the-Art BiCMOS Design
Significantly Reduces ICCZ
ESD Protection Exceeds 2000 V Per
MIL-STD-883C, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)
Designed to Facilitate Incident-Wave
Switching for Line Impedances of 25 Ω or Greater
Distributed VCC and GND Pins Minimize
Noise Generated by the Simultaneous Switching of Output...
