MSD602-RT1G, SMSD602-RT1G
Preferred Device
NPN General Purpose Amplifier Transistor Surface Mount
Features
• AEC−Q101 Q...
MSD602-RT1G, SMSD602-RT1G
Preferred Device
NPN General Purpose Amplifier Transistor Surface Mount
Features
AEC−Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Value
Unit
Collector−Base
Voltage
V(BR)CBO
Collector−Emitter
Voltage
V(BR)CEO
Emitter−Base
Voltage
V(BR)EBO
Collector Current − Continuous
IC
Collector Current − Peak
IC(P)
THERMAL CHARACTERISTICS
60 50 7.0 500 1.0
Vdc Vdc Vdc mAdc Adc
Characteristic
Symbol
Max
Unit
Power Dissipation
PD 200 mW
Junction Temperature
TJ 150 °C
Storage Temperature
Tstg − 55 ~ +150 °C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If...