SMP730

Features ◆6A,400V, RDS(on) =1.0 Ω@VGS=10V ◆Low gate charge ( typical 13 nC) ◆Low Crss ( typical 7pF) ◆100% avalanche tested ◆Fast switching ◆Improved dv/dt capability Application ◆Electronic Ballast ◆Active power factor correction ◆ Switching mode power supply SMP730 400V N-Channel Power MOSFET Absolute Maximum Ratings(Tc=25°C unless otherwise noted) Symbol VDSS VGS ID IDM PD Tj TSTG EAS IAR Drain-source Voltage Gate-source Voltage Parameters Continuous Drain Current Drain Current-Pulsed ① Power Dissipation Junction Temperature Storage Temperature Single Pulse Avalanche Energy② Avalanche Current① --TC=25°C --TC=100°C --(TC = 25°C) -- Derate above 25°C Value 400 ±30 6 3.6 24 75 0.6 150 -55-150 280 7.5 Thermal Characteristics Symbol Parameters RθJC Thermal Resistance Junction-case Min Typ Max 1.05 RθJA Thermal Resistance Junction-ambient 62.5 Unit V V A A A W W/°C °C °C mJ A Unit °C /W °C /W ©2012 Shenzhen SY Semiconductors Co....