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SMMDL6050T1G

ON Semiconductor

Switching Diode

MMDL6050T1G, SMMDL6050T1G Switching Diode Features  AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and...


ON Semiconductor

SMMDL6050T1G

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Description
MMDL6050T1G, SMMDL6050T1G Switching Diode Features  AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements  These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage Peak Forward Current Peak Forward Surge Current VR IF IFM(surge) 70 200 500 Vdc mAdc mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR-5 Board (Note 1) @TA = 25C Derate above 25C PD 200 mW 1.57 mW/C Thermal Resistance, Junction−to−Ambient RqJA 635 C/W Junction and Storage Temperature TJ, Tstg −55 to 150 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect dev...




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