SMK630F
Advanced N-Ch Power MOSFET
DC-DC CONVERTER APPLICATION HIGH VOLTAGE SWITCHING APPLICATIONS Features
• • • • Hig...
SMK630F
Advanced N-Ch Power
MOSFET
DC-DC CONVERTER APPLICATION HIGH
VOLTAGE SWITCHING APPLICATIONS Features
High
Voltage : BVDSS=200V(Min.) Low Crss : Crss=24pF(Typ.) Low gate charge : Qg=12nC(Typ.) Low RDS(on) : RDS(on)=0.4Ω(Max.)
G Package Code TO-220F-3L GD S TO-220F-3L
PIN Connection
D
Ordering Information
Type No. SMK630F Marking SMK630
S
Marking Diagram
AUK AUK GYMDD ΔYMDD SMK630 SDB20D45
Absolute maximum ratings (TC=25°C unless otherwise noted)
Characteristic
Drain-source
voltage Gate-source
voltage Drain current (DC) *
4953990 5 9 1 021 9 0 5 9 4 5 k 021 h . o z o y . w w w
Column 1 : Manufacturer Column 2 : Production Information e.g.) GYMDD -. G : Factory management code -. YMDD : Date Code (year, month, date) Column 3 : Device Code
Symbol
VDSS VGSS
Rating
200 ±30 9 5.4 36 30 9 232 9 9.5 150
Unit
V V A A A W A mJ A mJ °C
ID
(Tc=25℃)
(Tc=100℃) PD
Drain current (Pulsed) Power dissipation
*
IDM ② ② ① ① IAS EAS IAR EAR TJ Tstg
Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Junction temperature Storage temperature range
-55~150
* Limited by maximum junction temperature
Characteristic
Thermal resistance Junction-case Junction-ambient
Symbol
Rth(J-C) Rth(J-A)
Typ.
-
Max.
4.16 62.5
Unit
°C/W
KSD-T0O043-001
1
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SMK630F
Electrical Characteristics (TC=25°C unless otherwise noted)
Characteristic
Drain-source breakdown
voltage Gate threshold vol...