SMG351AN

SMG351AN 3A, 30V,RDS(ON) 60m£[ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product A L Description The SMG351AN uses advanced trench technology to provide excellent on-resistance with low gate change. The device is suitable for use as a load switch or in PWM applications. S 2 3 Top View SC-59 B 1 Dim A B C D J K Min 2.70 1.40 1.00 0.35 1.70 0.00 0.10 0.20 0.85 2.40 Max 3.10 1.60 1.30 0.50 2.10 0.10 0.26 0.60 1.15 2.80 D G C G H J K L S Features * Lower Gate Charge * Small Package Outline H Drain Gate Source D All Dimension in mm G S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage 3 Continuous Drain Current Pulsed Drain Current1,2 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25 IDM PD @TA=25 Tj, Tstg Symbol Rthj-a Ratings 30 ±20 3 10 1.38 0.01 -55 ~ +150 Value 90 Unit V V A A W W/ Thermal Data Parameter Thermal Resistance Junction-ambient3 Max. Unit /W http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Free Datasheet http://www.datasheet4u.com/ Page 1 of 4 SMG351AN 3A, 30V,RDS(ON) 60m£[ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET Electrical Characteristics (Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient unless otherwise specified) Min. 30 1.0 Typ. 0.1 13 8.5 1.5 3.2 6 20 20 3 660 90 70 0.9 ...