SMG3401

SMG3401 -4.2A, -30V,RDS(ON) 50m£[ Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET A suffix of "-C" specifies halogen & lead-free A Description The SMG3401 uses advanced trench technology to provide excellent on-resistance extremely efficient and cost-effectiveness device. The SMG3401 is universally used for all commercial-industrial applications. S 2 L SC-59 Dim Min 2.70 1.40 1.00 0.35 1.70 0.00 0.10 0.20 0.85 2.40 Max 3.10 1.60 1.30 0.50 2.10 0.10 0.26 0.60 1.15 2.80 3 Top View B 1 A B C D G C J K Drain D G H J K L S Features * Small Package Outline * Lower Gate Charge * RoHS Compliant H Gate Source D All Dimension in mm G S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current1,2 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg 3 3 Symbol VDS VGS ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C o o o Ratings -30 ±12 -4.2 -3.5 30 1.38 0.01 -55~+150 Unit V V A A A W W/ C o o C Thermal Data Parameter Thermal Resistance Junction-ambient 3 Symbol Max. Ratings 90 Unit o Rthj-a C /W http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Free Datasheet http://www.datasheet4u.com/ Page 1 of 4 SMG3401 -4.2A, -30V,RDS(ON) 50m£[ Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET Electrical Characteristics( Tj=25oC Unless otherwis...