PNP Silicon Darlington Transistors
SMBTA 63 SMBTA 64
High collector current q High DC current gain
q
Type SMBTA 63 SM...
PNP Silicon Darlington Transistors
SMBTA 63 SMBTA 64
High collector current q High DC current gain
q
Type SMBTA 63 SMBTA 64
Marking s2U s2V
Ordering Code (tape and reel) Q68000-A2625 Q68000-A2485
Pin Configuration 1 2 3 B E C
Package1) SOT-23
Maximum Ratings Parameter Collector-emitter
voltage Collector-base
voltage Emitter-base
voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TS = 81 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS
≤ ≤
Symbol SMBTA 63 VCE0 VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg 30 30 10
Values SMBTA 64 30 30 10 500 800 100 200 360 150
Unit V
mA
mW ˚C
– 65 … + 150
280 210
K/W
1) 2)
For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
1
5.91
SMBTA 63 SMBTA 64
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown
voltage IC = 10 µA Collector-base breakdown
voltage IC = 10 µA Emitter-base breakdown
voltage IE = 10 µA Collector-base cutoff current VCB = 30 V Emitter cutoff current VEB = 10 V DC current gain1) IC = 10 mA, VCE = 5 V IC = 100 mA, VCE = 5 V SMBTA 63 SMBTA 64 SMBTA 63 SMBTA 64 VCEsat VBEsat V(BR)CE0 V(BR)CB0 V(BR)EB0 ICB0 IEB0 hFE 5000 10000 10000 20000 – – – – – – – – – – – – 1.5 2 V 30 30 10 – – – – – – – – – – 100 100 – nA V V...