SMBTA55

PNP Silicon AF Transistors SMBTA 55 SMBTA 56 High breakdown voltage q Low collector-emitter saturation voltage q Complementary types: SMBTA 05, SMBTA 06 (NPN) q Type SMBTA 55 SMBTA 56 Marking s2H s2G Ordering Code (tape and reel) Q68000-A3386 Q68000-A2882 Pin Configuration 1 2 3 B E C Package1) SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TS = 79 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS ≤ ≤ Symbol SMBTA 55 VCE0 VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg 60 60 Values SMBTA 56 80 80 4 500 1 100 200 330 150 Unit V mA A mA mW ˚C – 65 … + 150 285 215 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 SMBTA 55 SMBTA 56 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 1 mA SMBTA 55 SMBTA 56 Collector-base breakdown voltage IC = 100 µA SMBTA 55 SMBTA 56 Emitter-base breakdown voltage IE = 10 µA Collector-base cutoff current VCB = 60 V VCB = 80 V VCB = 60 V, TA = 150 ˚C VCB = 80 V, TA = 150 ˚C Collector cutoff current VCE = 60 V DC current gain1) IC = 10 mA, VCE = 1 V IC = 100 mA, VCE = 1 V Collector-emitter saturation voltage...