SMBTA42M
NPN Silicon High-Voltage Transistor
High breakdown voltage Low collector-emitter saturation voltage Compl...
SMBTA42M
NPN Silicon High-
Voltage Transistor
High breakdown
voltage Low collector-emitter saturation
voltage Complementary type: SMBTA92M (PNP)
4 5 3 2 1
VPW05980
Type SMBTA42M
Maximum Ratings Parameter
Marking s1D 1=B
Pin Configuration 2=C 3=E
Package
4=n.c. 5 = C SCT595
Symbol VCEO VCBO VEBO IC IB Ptot Tj Tstg
Value 300 300 6 500 100 1.5 150 -65 ... 150
Unit V
Collector-emitter
voltage Collector-base
voltage Emitter-base
voltage DC collector current Base current Total power dissipation, TS 83 °C Junction temperature Storage temperature
mA W °C
Thermal Resistance Junction - soldering point 1) RthJS
45
K/W
1For calculation of R thJA please refer to Application Note Thermal Resistance
1
Nov-30-2001
SMBTA42M
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Collector-emitter breakdown
voltage IC = 100 µA, IB = 0 Collector-base breakdown
voltage IC = 10 µA, IE = 0 Emitter-base breakdown
voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 200 V, IE = 0 Collector-base cutoff current VCB = 200 V, TA = 150 °C Emitter cutoff current VEB = 3 V, IC = 0 DC current gain 1) IC = 1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 30 mA, VCE = 10 V Collector-emitter saturation
voltage1) IC = 20 mA, IB = 2 mA Base-emitter saturation
voltage 1) IC = 20 mA, IB = 2 mA AC Characteristics VBEsat VCEsat hFE IEBO ICBO ICBO V(BR)EBO V(BR)CBO V(BR)CEO typ. max.
Unit
300 300 6 -
-
100 20 100
V
nA µA nA...