SMBT5086

PNP Silicon Transistors SMBT 5086 SMBT 5087 For AF input stages and driver applications q High current gain q Low collector-emitter saturation voltage q Low noise between 30 Hz and 15 kHz q Type SMBT 5086 SMBT 5087 Marking s2P s2Q Ordering Code (tape and reel) Q62702-M0002 Q68000-A8319 Pin Configuration 1 2 3 B E C Package1) SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Total power dissipation, TS = 71 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS ≤ ≤ Symbol VCE0 VCB0 VEB0 IC Ptot Tj Tstg Values 50 50 3 50 330 150 – 65 … + 150 Unit V mA mW ˚C 310 240 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 SMBT 5086 SMBT 5087 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 1 mA Collector-base breakdown voltage IC = 100 µA Emitter-base breakdown voltage, IE = 10 µA Collector-base cutoff current VCB = 10 V, IE = 0 VCB = 35 V, IE = 0 VCB = 35 V, IE = 0, TA = 150 ˚C DC current gain IC = 100 µA, VCE = 5 V IC = 1 mA, VCE = 5 V IC = 10 mA, VCE = 5 V SMBT 5086 SMBT 5087 SMBT 5086 SMBT 5087 SMBT 5086 SMBT 5087 VCEsat VBEsat V(BR)CE0 V(BR)CB0 V(BR)EB0 ICB0 – – – hFE 150 250 150 250 150 250 – – – – – – – – – – 5...