SMBT2907

PNP Silicon Switching Transistors SMBT 2907 SMBT 2907 A High DC current gain: 0.1 mA to 500 mA q Low collector-emitter saturation voltage q Complementary types: SMBT 2222, SMBT 2222 A (NPN) q Type SMBT 2907 SMBT 2907 A Marking s2B s2F Ordering Code (tape and reel) Q68000-A6501 Q68000-A6474 Pin Configuration 1 2 3 B E C Package1) SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Total power dissipation, TS = 77 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS ≤ ≤ Symbol VCE0 VCB0 VEB0 IC Ptot Tj Tstg Values Unit SMBT 2907 SMBT 2907 A 40 60 60 5 600 330 150 – 65 … + 150 mA mW ˚C V 290 220 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 SMBT 2907 SMBT 2907 A Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA SMBT 2907 SMBT 2907 A Collector-base breakdown voltage IC = 10 µA SMBT 2907 SMBT 2907 A Emitter-base breakdown voltage IE = 10 µA Collector cutoff current VCB = 50 V VCB = 50 V VCB = 50 V, TA = 150 ˚C VCB = 50 V, TA = 150 ˚C Emitter cutoff current VEB = 3 V DC current gain1) IC = 100 µA, VCE = 10 V IC = 1 mA, VCE = 10 V SMBT 2907 SMBT 2907 A SMBT 2907 SMBT 2907 A SMBT 2907 SMBT 2907 A SMBT 2907 SM...