Silicon Switching Diode Array
For high-speed switching applications q Common cathode
q
SMBD 6100
Type SMBD 6100
Marki...
Silicon Switching Diode Array
For high-speed switching applications q Common cathode
q
SMBD 6100
Type SMBD 6100
Marking s5B
Ordering Code (tape and reel) Q68000-A8438
Pin Configuration
Package1) SOT-23
Maximum Ratings Parameter Reverse
voltage Peak reverse
voltage Forward current Surge forward current, t = 1 µs Total power dissipation, TS = 35 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS
≤ ≤
Symbol VR VRM IF IFS Ptot Tj Tstg
Values 70 70 200 4.5 250 150 – 65 … + 150
Unit V mA A mW ˚C
600 460
K/W
1) 2)
For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
1
5.91
SMBD 6100
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Breakdown
voltage I(BR) = 100 µA Forward
voltage IF = 1 mA IF = 100 mA Reverse current VR = 50 V AC characteristics Diode capacitance VR = 0, f = 1 MHz Reverse recovery time IF = 10 mA, IR = 10 mA, RL = 100 Ω measured at IR = 1 mA Test circuit for reverse recovery time CD trr – – – – 2.5 15 pF ns V(BR) VF 550 850 IR – – – – 700 1100 100 nA 70 – – V mV Values typ. max. Unit
Pulse generator: tp = 100 ns, D = 0.05 tr = 0.6 ns, Rj = 50 Ω
Oscillograph:
R = 50 Ω tr = 0.35 ns C ≤ 1 pF
Semiconductor Group
2
SMBD 6100
Forward current IF = f (TA*; TS) * Package mounted on epoxy
Reverse current IR = f (TA)
Forward cur...