SM8LZ47

SM8LZ47 TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM8LZ47 AC POWER CONTROL APPLICATIONS l Repetitive Peak Off−State Voltage l R.M.S ON−State Current l High Commutating (dv / dt) l Isolation Voltage : VDRM = 800V : IT(RMS) = 8A : (dv / dt) c = 10V / µs (Min.) : VISOL = 1500V AC Unit: mm MAXIMUM RATINGS CHARACTERISTIC Repetitive PeakOff−State Voltage R.M.S On−State Current (Full Sine Waveform) Peak One Cycle Surge On-State Current (Non−Repetitive) I t Limit Value Critical Rate of Rise of On−State Current (Note 1) Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Voltage Peak Gate Current Junction Temperature Storage Temperature Range Isolation Voltage (AC, t = 1min.) 2 SYMBOL VDRM IT (RMS) ITSM I t di / dt PGM PG (AV) VFGM IGM Tj Tstg VISOL 2 RATING 800 8 70 (50Hz) 80 (60Hz) 24.5 50 5 0.5 10 2 −40~125 −40~125 1500 UNIT V A A A s A / µs W W V A °C °C V 2 JEDEC JEITA TOSHIBA Weight: 1.7g ― ― 13−10H1A Note: di / dt test condition VDRM = 400V, ITM≤12A, tgw≥10µs, tgr≤250ns, igp = IGT×2.0 1 2001-07-13 SM8LZ47 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Repetitive Peak Off−State Current I Gate Trigger Voltage II III I Gate Trigger Current II III Peak On−State Voltage Gate Non−Trigger Voltage Holding Current Thermal Resistance Critical Rate of Rise of OffState Voltage Critical Rate of Rise of OffState Voltage at Commutation VTM VGD IH Rth (j−c) dv / dt ITM = 12A VD = 800V, Tc = 125°C VD = 12V, ITM = 1A Junction to Case, AC VDRM...