SM3GZ47,SM3JZ47
TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
SM3GZ47,SM3JZ47
AC POWER CONTROL APPLICATIO...
SM3GZ47,SM3JZ47
TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
SM3GZ47,SM3JZ47
AC POWER CONTROL APPLICATIONS
l Repetitive Peak Off−State
Voltage : VDRM = 400, 600V l R.M.S ON−State Current : IT (RMS) = 3A l High Commutating (dv / dt) l Isolation
Voltage : VISOL = 1500V AC Unit: mm
MAXIMUM RATINGS
CHARACTERISTIC Repetitive Peak Off−State
Voltage SM3GZ47 SM3JZ47 SYMBOL VDRM IT (RMS) ITSM I t di / dt PGM PG (AV) VGM IGM Tj Tstg VISOL
2
RATING 400 600 3 30 (50Hz) 33 (60Hz) 4.5 50 5 0.5 10 2 −40~125 −40~125 1500
UNIT V A A A s A / µs W W V A °C °C V
2
R.M.S On−State Current (Full Sine Waveform Tc = 110°C) Peak One Cycle Surge On−State Current (Non-Repetitive) I t Limit Value (t = 1~10ms) Critical Rate of Rise of On−State Current (Note 1) Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate
Voltage Peak Gate Current Junction Temperature Storage Temperature Range Isolation
Voltage (AC, t = 1min.)
2
JEDEC JEITA TOSHIBA Weight: 1.7g
― ― 13−10H1A
Note 1: di / dt test condition VDRM = 0.5×Rated ITM ≤ 4.5A tgw ≥ 10µs tgr ≤ 250ns igp = IGT×2.0
1
2001-07-13
SM3GZ47,SM3JZ47
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC Repetitive Peak Off−State Current I Gate Trigger
Voltage II III IV I Gate Trigger Current II III IV Peak On−State
Voltage Gate Non−Trigger
Voltage Holding Current Thermal Resistance Critical Rate of Rise of Off−State
Voltage Critical Rate of Rise of Off−State
Voltage at Commutation VTM VGD IH Rth (j−c) dv / dt ITM = 4.5A VD = Ra...