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SM2G54 Datasheet

Part Number SM2G54
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description BI?DIRECTIONAL TRIODE THYRISTOR
Datasheet SM2G54 DatasheetSM2G54 Datasheet (PDF)

SM2G54,SM2L54 TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM2G54,SM2L54 AC POWER CONTROL APPLICATIONS Repetitive Peak Off−State Voltage : VDRM = 800V R.M.S. On−State Current High Commutation (dv / dt) : IT (RMS) = 2A : (dv / dt) c = 5V / µs (Min.) Unit: mm MAXIMUM RATINGS CHARACTERISTIC Repetitive Peak Off−State Voltage R.M.S. On−State Current (Full Sine Waveform) Peak One Cycle Surge On−State Current (Non-Repetitive) I t Limit Value Critical Rate of Rise of On−State Current (N.

  SM2G54   SM2G54






Part Number SM2G50US60
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description IGBT
Datasheet SM2G54 DatasheetSM2G50US60 Datasheet (PDF)

www.DataSheet4U.com Preliminary SM2G50US60 FEATURES ' High Speed Switching ' Low Conduction Loss : VCE(sat) = 2.1 V (typ) ' Fast & Soft Anti-Parallel FWD ' Short circuit rated : Min 10uS at Tc=100 IGBT MODULE & APPLICATIONS ' ' ' ' ' Package code : 7-PM-AA G2 E2 C2E1 E2 C1 E1 G1 General Purpose Inverters Welding Machine Induction Heating UPS , CVCF Robotics , Servo Controls Internal Circuit Diagram ABSOLUTE MAXIMUM RATINGS (Tc = 25 Symbol VCES VGES IC ICM (1) IF IFM PC Tj Tstg Viso ) .

  SM2G54   SM2G54







BI?DIRECTIONAL TRIODE THYRISTOR

SM2G54,SM2L54 TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM2G54,SM2L54 AC POWER CONTROL APPLICATIONS Repetitive Peak Off−State Voltage : VDRM = 800V R.M.S. On−State Current High Commutation (dv / dt) : IT (RMS) = 2A : (dv / dt) c = 5V / µs (Min.) Unit: mm MAXIMUM RATINGS CHARACTERISTIC Repetitive Peak Off−State Voltage R.M.S. On−State Current (Full Sine Waveform) Peak One Cycle Surge On−State Current (Non-Repetitive) I t Limit Value Critical Rate of Rise of On−State Current (Note) Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Voltage Peak Gate Current Junction Temperature Storage Temperature Range 2 SYMBOL VDRM IT (RMS) ITSM I t di / dt PGM PG (AV) VFGM IGM Tj Tstg 2 RATING 800 2 8 (50Hz) 8.8 (60Hz) 0.32 50 3 0.3 10 1.6 −40~125 −40~125 UNIT V A A A s A / µs W W V A °C °C 2 1 : T1 2 : T2 3 : GATE JEDEC JEITA TOSHIBA Weight: 0.82g − − − Note: di / dt test condition VDRM = 400V, ITM ≤ 3A, tgw ≥ 10µs, tgr ≤ 250ns, igp = IGT × 2.0 1 2004-07-15 SM2G54,SM2L54 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Repetitive Peak Off−State Current I Gate Trigger Voltage II III I Gate Trigger Current II III Peak On−State Voltage Gate Non−Trigger Voltage Holding Current Thermal Resistance Critical Rate of Rise of Off−State Voltage Critical Rate of Rise of Off−State Voltage at Communication VTM VGD IH Rth (j−a) dv / dt (dv / dt) c ITM = 3A VD = 800V, Tc = 125°C VD = 12V, ITM = 1A Junction to Ambient, AC VDRM = 800V, Tj = 125°C Exponen.


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