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SLP8N65C Datasheet

Part Number SLP8N65C
Manufacturers Maple Semiconductor
Logo Maple Semiconductor
Description N-Channel MOSFET
Datasheet SLP8N65C DatasheetSLP8N65C Datasheet (PDF)

SLP8N65C / SLF8N65C SLP8N65C/SLF8N65C 650V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge .

  SLP8N65C   SLP8N65C






Part Number SLP8N65U
Manufacturers Maple Semiconductor
Logo Maple Semiconductor
Description N-Channel MOSFET
Datasheet SLP8N65C DatasheetSLP8N65U Datasheet (PDF)

SLP8N65U / SLF8N65U SLP8N65U/SLF8N65U 650V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge .

  SLP8N65C   SLP8N65C







Part Number SLP8N65S
Manufacturers Maple Semiconductor
Logo Maple Semiconductor
Description N-Channel MOSFET
Datasheet SLP8N65C DatasheetSLP8N65S Datasheet (PDF)

SLP8N65S / SLF8N65S SLP8N65S / SLF8N65S 650V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridg.

  SLP8N65C   SLP8N65C







N-Channel MOSFET

SLP8N65C / SLF8N65C SLP8N65C/SLF8N65C 650V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Features - 7.5A, 650V, RDS(on) typ. = 1.2Ω@VGS = 10 V - Low gate charge ( typical 29nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP8N65C SLF8N65C VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1) Ga.


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