SLP10N80CZ / SLF10N80CZ
SLP10N80CZ / SLF10N80CZ
800V N-Channel MOSFET
General Description
This Power MOSFET is produce...
SLP10N80CZ / SLF10N80CZ
SLP10N80CZ / SLF10N80CZ
800V N-Channel
MOSFET
General Description
This Power
MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.
Features
- 10A, 800V, RDS(on)Typ. = 0.85Ω@VGS = 10 V - Low gate charge ( typical 63 nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability - ESD Improved capability
D
G
GDS
TO-220
GDS
TO-220F
Absolute Maximum Ratings TC = 25°C unless otherwise noted
S
Symbol
Parameter
SLP10N80CZ SLF10N80CZ
VDSS
ID
IDM VGSS EAS IAR EAR dv/dt
PD
TJ, TSTG
TL
Drain-Source
Voltage
Drain Current
- Continuous (TC = 25℃) - Continuous (TC = 100...