SLP60R650SJ/SLF60R650SJ
SLP60R650SJ/SLF60R650SJ
600V N-Channel MOSFET
CB-FET
General Description
This Power MOSFET is...
SLP60R650SJ/SLF60R650SJ
SLP60R650SJ/SLF60R650SJ
600V N-Channel
MOSFET
CB-FET
General Description
This Power
MOSFET is produced using Maple semi‘s Advanced Super-Junction technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for AC/DC power conversion in switching mode operation for higher efficiency.
Features
- 7A, 600V, RDS(on) typ. = 0.58Ω@VGS = 10 V - Low gate charge ( typical 25nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability
D
GDS
TO-220
GDS
TO-220F
G S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
SLP60R650SJ SLF60R650SJ
VDSS ID
IDM VGSS
Drain-Source
Voltage
Drain Current Drain Current
- Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed
Gate-Source
Voltage
(Note 1)
600
7 7* 5 5* 10 10*
±30
EAS I...