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SKM200GB124D Datasheet

Part Number SKM200GB124D
Manufacturers ETC
Logo ETC
Description IGBT
Datasheet SKM200GB124D DatasheetSKM200GB124D Datasheet (PDF)

Absolute Maximum Ratings Symbol Conditions 1) VCES VCGR IC ICM VGES Ptot Tj, (Tstg) Visol humidity climate IF = –IC IFM = –ICM IFSM I 2t RGE = 20 kΩ Tcase = 25/85 °C Tcase = 25/85 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40040 DIN IEC 68 T.1 Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms tp = 10 ms; sin.; Tj = 150 °C tp = 10 ms; Tj = 150 °C Values Units 1200 1200 290 / 200 580 / 400 ± 20 1350 –40 ... +150 (125) 2500 Class F 40/125/56 195 / 130 580 / 400 1450 10 500 V V A A V W °C V S.

  SKM200GB124D   SKM200GB124D






Part Number SKM200GB124
Manufacturers ETC
Logo ETC
Description IGBT
Datasheet SKM200GB124D DatasheetSKM200GB124 Datasheet (PDF)

Absolute Maximum Ratings Symbol Conditions 1) VCES VCGR IC ICM VGES Ptot Tj, (Tstg) Visol humidity climate IF = –IC IFM = –ICM IFSM I 2t RGE = 20 kΩ Tcase = 25/85 °C Tcase = 25/85 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40040 DIN IEC 68 T.1 Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms tp = 10 ms; sin.; Tj = 150 °C tp = 10 ms; Tj = 150 °C Values Units 1200 1200 290 / 200 580 / 400 ± 20 1350 –40 ... +150 (125) 2500 Class F 40/125/56 195 / 130 580 / 400 1450 10 500 V V A A V W °C V S.

  SKM200GB124D   SKM200GB124D







IGBT

Absolute Maximum Ratings Symbol Conditions 1) VCES VCGR IC ICM VGES Ptot Tj, (Tstg) Visol humidity climate IF = –IC IFM = –ICM IFSM I 2t RGE = 20 kΩ Tcase = 25/85 °C Tcase = 25/85 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40040 DIN IEC 68 T.1 Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms tp = 10 ms; sin.; Tj = 150 °C tp = 10 ms; Tj = 150 °C Values Units 1200 1200 290 / 200 580 / 400 ± 20 1350 –40 ... +150 (125) 2500 Class F 40/125/56 195 / 130 580 / 400 1450 10 500 V V A A V W °C V SEMITRANS® M Low Loss IGBT Modules SKM 200 GB 124 D Inverse Diode A A A A2s SEMITRANS 3 Characteristics Symbol Conditions 1) V(BR)CES VGE(th) ICES IGES VCEsat VCEsat gfs CCHC Cies Coes Cres LCE td(on) tr td(off) tf Eon Eoff VF = VEC VF = VEC VTO rt IRRM Qrr Rthjc Rthjc Rthch VGE = 0, IC = 4 mA VGE = VCE, IC = 6 mA Tj = 25 °C VGE = 0 VCE = VCES Tj = 125 °C VGE = 20 V, VCE = 0 IC = 150 A VGE = 15 V; IC = 200 A Tj = 25 (125) °C VCE = 20 V, IC = 150 A per IGBT VGE = 0 VCE = 25 V f = 1 MHz VCC = 600 V VGE = –15 V / +15 V3) IC = 150 A, ind. load RGon = RGoff = 7Ω Tj = 125 °C min. typ. – 5,5 0,4 12 – 2,1(2,4) 2,5(3,0) – – 11 1,6 0,8 – 75 50 520 50 21 19 2,0(1,8) 2,25(2,05) 1,1 – 78 19,5 – – – max. – 6,5 14 – 0,32 2,45(2,85) – – 700 15 2 1 20 – – – – – – 2,5 – 1,2 7 – – 0,09 0,25 0,038 Units V V mA mA µA V V S pF nF nF nF nH ns ns ns ns mWs mWs V V V mΩ A µC °C/W °C/W °C/W ≥ VCES 4,5 – – – – – 62 – – – – – – – – – – – – – – – – – – – – GB Features • MOS input (voltage controlled) • N c.


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