SKIM400GD126DM

SKiM400GD126DM SKiM® 4 Trench IGBT Modules SKiM400GD126DM Features Trench gate IGBT with field stop layer Low inductance case Fast & soft inverse CAL diodes Isolated by AIN DCB (Direct Copper Bonded) ceramic plate Pressure contact technology for thermal contacts Spring contact system to attach driver PCB to the control terminals Integrated temperature sensor Typical Applications* Switched mode power supplies Three phase inverters for AC motor speed control Switching (not for linear use) Absolute Maximum Ratings Symbol Conditions IGBT VCES IC Tj = 150 °C Ts = 25 °C Ts = 70 °C ICnom ICRM VGES tpsc Tj ICRM = 2xICnom VCC = 600 V VGE ≤ 15 V VCES ≤ 1200 V Tj = 125 °C Inverse diode IF Tj = 150 °C Ts = 25 °C Ts = 70 °C IFnom IFRM IFRM = 2xIFnom IFSM tp = 10 ms, sin 180°, Tj = 25 °C Tj Module It(RMS) Tterminal = 80 °C Tstg Visol AC sinus 50 Hz, t = 1 min Characteristics Symbol Conditions IGBT VCE(sat) VCE0 rCE VGE(th) Cies Coes Cres ICES QG RGint td(on) tr Eon td(off) tf Eoff Rth(j-s) IC = 300 A VGE = 15 V chiplevel Tj = 25 °C Tj = 125 °C chiplevel VGE = 15 V chiplevel Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C VGE=VCE, IC = 12 mA VCE = 25 V VGE = 0 V f = 1 MHz f = 1 MHz f = 1 MHz VGE = 0 V, VCE = 1200 V, Tj = 25 °C VGE = - 8 V...+ 15 V Tj = 25 °C VCC = 600 V IC = 300 A RG on = 1 Ω RG off = 1 Ω di/dton = 11000 A/ µs Tj = 125 °C Tj = 125 °C Tj = 125 °C Tj = 125 °C Tj = 125 °C di/dtoff = 2700 A/µs Tj = 125 °C Values 1200 ...