SKIIP81ANB15T1

SKiiP 81 ANB 15 T1 Absolute Maximum Ratings Symbol Conditions 1) Bridge Rectifier VRRM ID IFSM I²t Theatsink = 80 °C tp = 10 ms; sin. 180°, Tj = 25 °C tp = 10 ms; sin. 180°, Tj = 25 °C 1500 100 3) 1000 5000 1200 ± 20 33 / 22 66 / 44 1200 24 / 17 48 / 34 – 40 ... + 150 – 40 ... + 125 2500 V A A A²s V V A A V A A °C °C V Values Units MiniSKiiP 8 SEMIKRON integrated intelligent Power SKiiP 81 ANB 15 T1 3-phase bridge rectifier + IGBT braking chopper IGBT Chopper VCES VGES IC Theatsink = 25 / 80 °C I CM www.DataSheet4U.com tp < 1 ms; Theatsink = 25 / 80 °C Freewheeling Diode 2) VRRM IF IFM Tj Tstg Visol Theatsink = 25 / 80 °C tp < 1 ms; Theatsink = 25 / 80 °C Diode & IGBT AC, 1 min. Case M8a Characteristics Symbol Conditions 1) Diode - Rectifier VF VTO rT Rthjh IF = 75 A Tj = 125 °C Tj = 125 °C Tj = 125 °C per diode – – – – – – – – – – – – – – – – – – – 1,15 0,8 4,5 – 2,5(3,1) 75 65 400 50 6,2 1,65 – 2,0(1,8) 1,0 53 16 2,7 0,6 – – – – 1,0 3,0(3,7) – – – – – – 1,0 2,5(2,3) 1,2 73 – – – 1,7 V V mΩ K/W min. typ. max. Units IGBT - Chopper IC = 25 A Tj = 25 (125) °C VCEsat td(on) VCC = 600 V; VGE = ± 15 V tr IC = 25 A; Tj = 125 °C Rgon = Rgoff = 47 Ω td(off) tf inductive load Eon + Eoff VCE = 25 V; VGE = 0 V, 1 MHz Cies per IGBT Rthjh Diode 2) - Chopper VF = VEC VTO rT IRRM Qrr Eoff Rthjh RTS M1 Case IF = 15 A Tj = 25 (125) °C Tj = 125 °C Tj = 125 °C IF = 15 A; VR = – 600 V diF/dt = – 400 A/µs VGE = 0 V, Tj = 125 °C per diode T = 25 / 100 °C mounting torque mechanical outli...