SKIIP32NAB06

SKiiP 32 NAB 06 Absolute Maximum Ratings 3) Symbol Inverter VCES VGES IC ICM IF = –IC IFM = –ICM Conditions 1) Values 600 ± 20 75 / 50 150 / 100 75 / 50 150 / 100 800 25 370 680 – 40 . . . + 150 – 40 . . . + 125 2500 Units V V A A A A V A A A2s °C °C V Theatsink = 25 / 80 °C tp < 1 ms; Theatsink = 25 / 80 °C Theatsink = 25 / 80 °C tp < 1 ms; Theatsink = 25 / 80 °C MiniSKiiP 3 SEMIKRON integrated intelligent Power SKiiP 32 NAB 06 3-phase bridge rectifier + braking chopper + 3-phase bridge inverter Case M3 Bridge Rectifier VRRM Theatsink = 80 °C ID tp = 10 ms; sin. 180 °, Tj = 25 °C IFSM tp = 10 ms; sin. 180 °, Tj = 25 °C I2t Tj Tstg Visol AC, 1 min. Characteristics Symbol Conditions 1) IGBT - Inverter IC =75 A Tj = 25 (125) °C VCEsat VCC = 300 V; VGE = ± 15 V td(on) IC = 100 A; Tj = 125 °C tr Rgon = Rgoff = 11 Ω td(off) inductive load tf Eon + Eoff Cies VCE = 25 V; VGE = 0 V, 1 MHz per IGBT Rthjh IGBT - Chopper * VCEsat IC = 50 A Tj = 25 (125) °C VCC = 300 V; VGE = ± 15 V td(on) IC = 50 A; Tj = 125 °C tr Rgon = Rgoff = 22 Ω td(off) inductive load tf Eon + Eoff Cies VCE = 25 V; VGE = 0 V, 1 MHz per IGBT Rthjh Diode 2) - Inverter VF = VEC IF = 75 A Tj = 25 (125) °C Tj = 125 °C VTO Tj = 125 °C rT IF = 75 A, VR = – 300 V IRRM diF/dt = – 800 A/µs Qrr VGE = 0 V, Tj = 125 °C Eoff per diode Rthjh min. – – – – – – – – – – – – – – – – – – – – – – – typ. max. Units V 1,9(2,0) 2,5(2,6) ns 120 60 ns 160 80 ns 500 330 ns 830 550 mJ – 15 nF – 5,6 K/W 0,5 – V 2,1(2,2) 2,7(2,8) ns 120 60 ...