SKCD 46 C 120 I4F R
Absolute Maximum Ratings Symbol
VRRM IF(AV) IFSM Tjmax
Conditions
Tj = 25 °C, IR = 0.12 mA Tc = 80 ...
SKCD 46 C 120 I4F R
Absolute Maximum Ratings Symbol
VRRM IF(AV) IFSM Tjmax
Conditions
Tj = 25 °C, IR = 0.12 mA Tc = 80 °C, Tj = 175 °C, Fi=PI/2 10 ms sin 180° Tj = 25 °C Tj = 150 °C
Values
1200 48 430 430 175
Unit
V A A A °C
CAL-DIODE
IF = 75 A VRRM = 1200 V Size: 9,12 mm x 5,10 mm
SKCD 46 C 120 I4F R Features
max. junction 175 °C very low forward
voltage drop positive temperature coefficient extreme soft recovery
Electrical Characteristics Symbol
i²t IR VF
Conditions
Tj = 150 °C, sin 180°, 10 ms Tj = 25 °C, VRRM = 1200 V Tj = 150 °C, VRRM = 1200 V Tj = 25 °C, IF = 75 A Tj = 150 °C, IF = 75 A Tj = 175 °C, IF = 75 A
min.
typ.
max.
925 0.12
Unit
A²s mA mA V V V V m V m
7.00 2.17 2.11 1.96 0.90 16.1 0.82 15.20
14.00 2.49 2.42 2.27 1.10 17.70 0.98 17.30
V(TO) rT V(TO) rT
Tj = 150 °C Tj = 150 °C Tj = 175 °C Tj = 175 °C
Dynamic Characteristics Symbol
trr Err Irrm
Typical Applications*
freewheeling diode for IGBT
Conditions
Tj = 150 °C, 75 A, 600 V, 1500 A/µs Tj = 150 °C, 75 A, 600 V, 1500 A/µs Tj = 150 °C, 75 A, 600 V, 1500 A/µs
min.
typ.
0.5 4.2 58
max.
Unit
µs mJ A
Thermal Characteristics Symbol
Tj Tstg Tsolder Tsolder Rth(j-c) 10 min. 5 min. Semitrans Assembly 0.66
Conditions
min.
-40 -40
typ.
max.
175 175 250 320
Unit
°C °C °C °C K/W
Mechanical Characteristics Symbol
Raster size Area total Anode Cathode Wire bond Package Chips / Package Metallization Metallization
Conditions
Values
9,12 x 5,10 46 bondable (Al) solderable (Ag/Ni) Al, typ...