SKB10N60A
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
• 75% lower Eoff compared to ...
SKB10N60A
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
75% lower Eoff compared to previous generation combined with low conduction losses
Short circuit withstand time – 10 µs Designed for frequency inverters for washing machines,
fans, pumps and vacuum cleaners
NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability
Very soft, fast recovery anti-parallel EmCon diode Pb-free lead plating; RoHS compliant Qualified according to JEDEC1 for target applications Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C G
E
PG-TO-263-3-2
Type SKB10N60A
VCE IC VCE(sat) Tj Marking Package
600V 10A
2.3V
150°C K10N60 PG-TO-263-3-2
Maximum Ratings Parameter
Collector-emitter
voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax Gate-emitter
voltage Short circuit withstand time2 VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C Power dissipation TC = 25°C Operating junction and storage temperature Soldering temperature (reflow soldering, MSL1)
Symbol VCE IC
ICpuls -
IF
IFpuls VGE tSC
Ptot
Tj , Tstg Ts
Value 600
20 10.6 40 40
21 10 42 ±20 10
92 -55...+150
245
Unit V A
V µs W °C °C
1 J-STD-020 and JESD-022 2 Allowed number of short circuits: <1000...