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• TrenchFET® Gen III p-channel power MOSFET
• Ultra small 0.8 mm x 0.6 mm outline
• Ultra thin 0.4 mm max.height
• Typical ESD protection 1500 V (HBM)
• -1.5 V rated RDS(ON)
• 100% Rg tested
• Material categorization: for definitions of compliance p...

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