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SIPC42S2N08 Datasheet

Part Number SIPC42S2N08
Manufacturers Infineon Technologies AG
Logo Infineon Technologies AG
Description OptiMOS Chip data sheet
Datasheet SIPC42S2N08 DatasheetSIPC42S2N08 Datasheet (PDF)

Preliminary data OptiMOSâ Chip data sheet SIPC42S2N08 Feature • N-Channel • Enhancement mode • 175°C operating temperature • Avalanche rated • dv/dt rated • Integrated gate resistance for easy parallel connection Ordering Code unsawn wafer on foil sawn wafer on foil surf tape DESCRIPTION • Assembly by epoxy die bonding or soldering • AQL 1.5 for visual inspection according to failure catalog A67207-A7001-A001 issue C on 100% measured wafer • Storage of chips and wafer according technical guide.

  SIPC42S2N08   SIPC42S2N08






OptiMOS Chip data sheet

Preliminary data OptiMOSâ Chip data sheet SIPC42S2N08 Feature • N-Channel • Enhancement mode • 175°C operating temperature • Avalanche rated • dv/dt rated • Integrated gate resistance for easy parallel connection Ordering Code unsawn wafer on foil sawn wafer on foil surf tape DESCRIPTION • Assembly by epoxy die bonding or soldering • AQL 1.5 for visual inspection according to failure catalog A67207-A7001-A001 issue C on 100% measured wafer • Storage of chips and wafer according technical guideline 14 Doc. No. A66003-R14-T1-B-35 VDS RDS(on) Die size Thickness 75 4.2 7x6 175 V mΩ mm2 µm on request Q67061-S7146 on request Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current 1)2) TC=25°C Symbol ID EAS Value 227 1070 50 ±20 5 ±20% -55... +175 Unit A mJ mJ V Ω °C Avalanche energy, single pulse1) ID =80A, VDD =25V, RGS =25Ω Repetitive avalanche energy, limited by Tjmax 1)2) EAR Gate source voltage VGS Additional gate resistance Operating and storage temperature 1Defined by design. Not subject to production test. 2Calculated with R = 0.3 K/W thJC RG Tj , Tstg Infineon AG, AI AP APE, Informations #184R 1 2002-02-01 Preliminary data SIPC42S2N08 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage VGS =0V, ID =1mA Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) 75 2.1 Values typ. 3 Unit max. 4 µA V Gate threshold voltage, VGS = VDS ID = 250 µA .


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