SIHG25N60EFL

www.vishay.com SiHG25N60EFL Vishay Siliconix E Series Power MOSFET with Fast Body Diode and Low Gate Charge PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) typ. () at 25 °C Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 75 17 19 Single TO-247AC 0.127 D S D G G S N-Channel MOSFET FEATURES Reduced figure-of-merit (FOM): Ron x Qg Fast body diode MOSFET using E series technology Reduced trr, Qrr, and IRRM Increased robustness due to low Qrr Low input capacitance (Ciss) Reduced switching and conduction losses Avalanche energy rated (UIS) Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS Telecommunications - Server and telecom power supplies Computing - ATX power supplies Industrial - Welding - Induction heating - Battery chargers - Uninterruptible power supplies (UPS) Renewable energy - String PV inverters ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free...