www.vishay.com
SiHG24N65EF
Vishay Siliconix
E Series Power MOSFET with Fast Body Diode
PRODUCT SUMMARY
VDS (V) at TJ...
www.vishay.com
SiHG24N65EF
Vishay Siliconix
E Series Power
MOSFET with Fast Body Diode
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) max. () at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration
700 VGS = 10 V
122 17 36 Single
0.156
D
TO-247AC
G
S
D G
S N-Channel
MOSFET
FEATURES Fast body diode
MOSFET using E series
technology Reduced trr, Qrr, and IRRM Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss) Low switching losses due to reduced Qrr Ultra low gate charge (Qg) Avalanche energy rated (UIS) Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
Telecommunications - Server and telecom power supplies
Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting
Consumer and computing - ATX power supplies
Industrial - Welding - Battery chargers
Renewable energy - Solar (PV inverters)
Switch mode power supplies (SMPS) Applications using the following topologies
- LCC - Phase shifted bridge (ZVS) - 3-level inverter - AC/DC bridge
ORDERING INFORMATION
Package Lead (Pb)-free and halogen-free
TO-247AC SiHG24N65EF-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source
voltage Gate-source
voltage
Continuous drain current (TJ = 150 °C)
Pulsed drain current a Linear derating factor
VGS at 10 V
TC = 25 °C TC = 100 °C
VDS VGS
ID
IDM
Single pulse avalanche energy b Maximum power dissipation Operating junction and storage t...