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SIHG20N50C
N-Channel MOSFET
Description
isc N-Channel
MOSFET
Transistor SIHG20N50C FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source
Voltage
- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.27Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and gener...
INCHANGE
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