SiHG17N60D
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Vishay Siliconix
D Series Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) max. at 25 °C () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 90 14 22 Single
D
FEATURES
650 0.340
Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Dio...
