Power MOSFET
IRFZ34, SiHFZ34
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Co...
Power
MOSFET
IRFZ34, SiHFZ34
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
60 VGS = 10 V
46 11 22 Single
0.050
D
TO-220AB
G
S D G
S N-Channel
MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES Dynamic dV/dt Rating 175 °C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements Compliant to RoHS Directive 2002/95/EC
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power
MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.
TO-220AB IRFZ34PbF SiHFZ34-E3 IRFZ34 SiHFZ34
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source
Voltage
VDS
Gate-Source
Voltage
VGS
Continuous Drain Current
VGS at 10 V
TC = 25 °C TC = 100 °C
ID
Pulsed Drain Currenta
IDM
Linear Derating Factor
Single Pulse Avalanche Energyb Maximum Power Dissipation Peak Diode Recovery dV/dtc
TC = 25 °C
EAS PD dV/dt
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive ra...