IRF740S, SiHF740S
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Co...
IRF740S, SiHF740S
Vishay Siliconix
Power
MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 63 9.0 32 Single
D
FEATURES
400 0.55
Halogen-free According to IEC 61249-2-21 Definition Surface Mount Available in Tape and Reel Dynamic dV/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Compliant to RoHS Directive 2002/95/EC
D2PAK (TO-263)
DESCRIPTION
G G D S S N-Channel
MOSFET
Third generation Power
MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application.
D2PAK (TO-263) SiHF740STRL-GE3a IRF740STRLPbFa SiHF740STL-E3a D2PAK (TO-263) SiHF740STRR-GE3a IRF740STRRPbFa SiHF740STR-E3a
ORDERING INFORMATION
Package Lead (Pb)-free and Halogen-free Lead (Pb)-free Note a. See device orientation. D2PAK (TO-263) SiHF740S-GE3 IRF740SPbF SiHF740S-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current VGS...