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SiHD12N50E Datasheet

Part Number SiHD12N50E
Manufacturers INCHANGE
Logo INCHANGE
Description N-Channel MOSFET
Datasheet SiHD12N50E DatasheetSiHD12N50E Datasheet (PDF)

Isc N-Channel MOSFET Transistor SiHD12N50E ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±30 10.5 6.

  SiHD12N50E   SiHD12N50E






Part Number SIHD12N50E
Manufacturers Vishay
Logo Vishay
Description MOSFET
Datasheet SiHD12N50E DatasheetSIHD12N50E Datasheet (PDF)

www.vishay.com SiHD12N50E Vishay Siliconix E Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. at 25 °C (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 550 VGS = 10 V 50 6 10 Single 0.380 DPAK (TO-252) D GS D G S N-Channel MOSFET FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please see w.

  SiHD12N50E   SiHD12N50E







N-Channel MOSFET

Isc N-Channel MOSFET Transistor SiHD12N50E ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±30 10.5 6.6 21 PD Total Dissipation @TC=25℃ 114 Tch Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 62 1.1 UNIT ℃/W ℃/W isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark Isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA VGS(th) Gate Threshold Voltage VDS=VGS; ID=0.25mA RDS(on) Drain-Source On-Resistance VGS= 10V; ID=6A IGSS Gate-Source Leakage Current VGS=±20V;VDS= 0V IDSS Drain-Source Leakage Current VDS=500V; VGS= 0V VSDF Diode forward voltage ISD=7.5A, VGS = 0 V SiHD12N50E MIN TYP MAX UNIT 500 V 2.0 4.0 V 330 380 mΩ ±0.1 μA 1 μA 1.2 V NOTICE: ISC reserves the rights to make changes of the content herein the datasheet .


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