SIGC76T60R3

www.DataSheet4U.com SIGC76T60R3 IGBT Chip FEATURES: 600V Trench & Field Stop technology low VCE(sat) low turn-off losses short tail current positive temperature coefficient easy paralleling 3 This chip is used for: power module C Applications: drives G E Chip Type SIGC76T60R3 VCE 600V ICn 150A Die Size 7.87 x 9.69 mm2 Package sawn on foil Ordering Code Q67050A4343-A101 MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max. possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject ink dot size Recommended storage environment 7.87 x 9.69 ( 3.344 x 1.938 ) x 4 ( 3.344 x 2.128 ) x 4 1.615 x 0.817 76.3 / 60 70 150 90 173 pcs Photoimide 3200 nm AlSiCu 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al, <500µm ∅ 0.65mm ; max 1.2mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C mm µm mm deg 2 mm 2 Edited by INFINEON Technologies AI PS DD CLS, L7591A, Edition 2, 27.01.2005 SIGC76T60R3 MAXIMUM RATINGS: Parameter Collector-emitter voltage, Tj= 25 °C DC collector current, limited by Tjmax Pulsed collector current, tp limited by Tjmax Gate emitter voltage Operating junction and storage temperature SC data, VGE = 15V, VCC = 360V 1) Symbol VC E IC Icpuls V GE Tj, Ts t g Tvj = 150°C Tvj = 25°C tp Value 600 1) Unit V A A V °C µ...