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SIGC185T170R2C Datasheet

Part Number SIGC185T170R2C
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description IGBT
Datasheet SIGC185T170R2C DatasheetSIGC185T170R2C Datasheet (PDF)

www.DataSheet4U.com SIGC185T170R2C IGBT Chip in NPT-technology FEATURES: • 1700V NPT technology • 280µm chip • short circuit prove • positive temperature coefficient • easy paralleling C This chip is used for: • IGBT-Module BSM100GB170DL Applications: • drives G E Chip Type SIGC185T170R2C VCE ICn Die Size 13.56 x 13.56 mm2 Package sawn on foil Ordering Code Q67041-A4697A001 1700V 100A MECHANICAL PARAMETER: Raster size Area total / active Emitter pad size Gate pad size Thickness Wafer.

  SIGC185T170R2C   SIGC185T170R2C






IGBT

www.DataSheet4U.com SIGC185T170R2C IGBT Chip in NPT-technology FEATURES: • 1700V NPT technology • 280µm chip • short circuit prove • positive temperature coefficient • easy paralleling C This chip is used for: • IGBT-Module BSM100GB170DL Applications: • drives G E Chip Type SIGC185T170R2C VCE ICn Die Size 13.56 x 13.56 mm2 Package sawn on foil Ordering Code Q67041-A4697A001 1700V 100A MECHANICAL PARAMETER: Raster size Area total / active Emitter pad size Gate pad size Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metalization Collector metalization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 13.56 x 13.56 183.87 / 141.6 8 x ( 2.38x3.98 ) 0.757 x 1.48 280 150 90 72 pcs Photoimide 3200 nm Al Si 1% 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding Electrically conductive glue or solder Al, ≤500µm ∅ 0.65mm ; max 1.2mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C µm mm deg mm 2 Edited by INFINEON Technologies AI PS DD HV3, L 7371M, Edition 2, 04.09.2003 SIGC185T170R2C MAXIMUM RATINGS: Parameter Collector-emitter voltage, Tj=25 °C DC collector current, limited by Tjmax Pulsed collector current, tp limited by Tjmax Gate emitter voltage Operating junction and storage temperature 1) Symbol V CE IC Icpuls V GE Tj, Ts t g Value 1700 1) Unit V A A V °C 300 ±20 -55 ... +150 depending on thermal properties of assembly STATIC CHARACTE.


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