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SIGC185T170R2C
IGBT Chip in NPT-technology
FEATURES: • 1700V NPT technology • 280µm chip • short circuit prove • positive temperature coefficient • easy paralleling
C
This chip is used for: • IGBT-Module BSM100GB170DL Applications: • drives
G
E
Chip Type
SIGC185T170R2C
VCE
ICn
Die Size 13.56 x 13.56 mm2
Package sawn on foil
Ordering Code Q67041-A4697A001
1700V 100A
MECHANICAL PARAMETER: Raster size Area total / active Emitter pad size Gate pad size Thickness Wafer.
IGBT
www.DataSheet4U.com
SIGC185T170R2C
IGBT Chip in NPT-technology
FEATURES: • 1700V NPT technology • 280µm chip • short circuit prove • positive temperature coefficient • easy paralleling
C
This chip is used for: • IGBT-Module BSM100GB170DL Applications: • drives
G
E
Chip Type
SIGC185T170R2C
VCE
ICn
Die Size 13.56 x 13.56 mm2
Package sawn on foil
Ordering Code Q67041-A4697A001
1700V 100A
MECHANICAL PARAMETER: Raster size Area total / active Emitter pad size Gate pad size Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metalization Collector metalization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 13.56 x 13.56 183.87 / 141.6 8 x ( 2.38x3.98 ) 0.757 x 1.48 280 150 90 72 pcs Photoimide 3200 nm Al Si 1% 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding Electrically conductive glue or solder Al, ≤500µm ∅ 0.65mm ; max 1.2mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C µm mm deg mm
2
Edited by INFINEON Technologies AI PS DD HV3, L 7371M, Edition 2, 04.09.2003
SIGC185T170R2C
MAXIMUM RATINGS: Parameter Collector-emitter voltage, Tj=25 °C DC collector current, limited by Tjmax Pulsed collector current, tp limited by Tjmax Gate emitter voltage Operating junction and storage temperature
1)
Symbol V CE IC Icpuls V GE Tj, Ts t g
Value 1700
1)
Unit V A A V °C
300 ±20 -55 ... +150
depending on thermal properties of assembly
STATIC CHARACTE.