SIGC12T120

www.DataSheet4U.com SIGC12T120 IGBT Chip FEATURES: 1200V Trench & Field Stop technology low turn-off losses short tail current positive temperature coefficient easy paralleling 3 This chip is used for: power module C Applications: drives G E Chip Type SIGC12T120 VCE 1200V ICn 8A Die Size 3.54 x 3.5 mm2 Package sawn on foil Ordering Code Q67050A4102-A001 MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 3.54 x 3.5 2.028 x 2.028 1.107 x 0.702 12.4 / 6.9 140 150 0 1200 pcs Photoimide 3200 nm AlSiCu 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al, <500µm ∅ 0.65mm ; max 1.2mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C mm µm mm grd 2 mm Edited by INFINEON Technologies AI PS DD HV3, L7621A, Edition 2, 04.09.2003 SIGC12T120 MAXIMUM RATINGS: Parameter Collector-emitter voltage, Tj=25 °C DC collector current, limited by Tjmax Pulsed collector current, tp limited by Tjmax Gate emitter voltage Operating junction and storage temperature 1) Symbol V CE IC Icpuls V GE Tj, Ts t g Value 1200 1) Unit V A A V °C 24 ±20 -55 ... +150 depending on thermal properties of assembly STATIC CHARACTERISTICS (tested on chip), Tj...