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SIGC121T120R2CL

Part Number	SIGC121T120R2CL
Manufacturer	Infineon Technologies
Description	IGBT
Published	Sep 15, 2007
Detailed Description	com SIGC121T120R2CL IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology • 180µm chip • low tur...
Datasheet	SIGC121T120R2CL PDF File

Overview

com SIGC121T120R2CL IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology • 180µm chip • low turn-off losses • positive temperature coefficient • easy paralleling • integrated gate resistor This chip is used for: • power module BSM75GD120DLC Applications: • drives C G E Chip Type VCE ICn 75A Die Size 11.
08 X 11.
08 mm2 Package sawn on foil Ordering Code Q67041A4686-A003 SIGC121T120R2CL 1200V MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.
possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended St...

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