SIDC11D60SIC3

SIDC11D60SIC3 Silicon Carbide Schottky Diode FEATURES: Worlds first 600V Schottky diode Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior Ideal diode for Power Factor Correction No forward recovery Applications: SMPS, PFC, snubber A C Chip Type SIDC11D60SIC3 VBR 600V IF 4A Die Size 1.15 x 0.97 mm2 Package sawn on foil Ordering Code Q67050-A4161A104 MECHANICAL PARAMETER: Raster size Anode pad size Area total / active Thickness Wafer size Flat position Max. possible chips per wafer Passivation frontside Anode metalization Cathode metalization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 1.15 x 0.97 mm 0.85 x 0.67 1.116 / 0.581 355 75 0 3555 pcs Photoimide 3200 nm Al 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al, ≤ 250µm ∅ ≥ 0.3 mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C mm µm mm deg 2 Edited by INFINEON Technologies, AI PS DD HV3, Edition 1, 22.04.2004 SIDC11D60SIC3 Maximum Ratings Parameter Repetitive peak reverse voltage Surge peak reverse voltage Continuous forward current limited by Tjmax Single pulse forward current (depending on wire bond configuration) Symbol VRRM V RSM IF I FSM I FRM I FMAX Tj , Ts t g Condition Value 600 600 4 Unit V TC =25° C, tP =10 ms sinusoidal TC = 100 ° C, T j = 1 5 0 ° C, D=0...