SIDC05D60SIC3
Silicon Carbide Schottky Diode
FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor ...
SIDC05D60SIC3
Silicon Carbide Schottky Diode
FEATURES: Worlds first 600V Schottky diode Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior Ideal diode for Power Factor Correction No forward recovery Applications: SMPS, PFC, snubber
A
C
Chip Type
SIDC05D60SIC3
VBR 600V
IF 2A
Die Size 0.84 x 0.59 mm2
Package sawn on foil
Ordering Code Q67050-A4201A103
MECHANICAL PARAMETER: Raster size Anode pad size Area total / active Thickness Wafer size Flat position Max. possible chips per wafer Passivation frontside Anode metalization Cathode metalization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 0.84 x 0.59 mm 0.632 x 0.382 0.496 / 0.255 355 75 0 7970 pcs Photoimide 3200 nm Al 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al, ≤ 125µm ∅ ≥ 0.2 mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C mm µm mm deg
2
Edited by INFINEON Technologies, AI PS DD HV3, Edition 1, 22.04.2004
SIDC05D60SIC3
Maximum Ratings
Parameter Repetitive peak reverse
voltage Surge peak reverse
voltage Continuous forward current limited by Tjmax Single pulse forward current
(depending on wire bond configuration)
Symbol VRRM V RSM IF I FSM I FRM I FMAX Tj , Ts t g
Condition
Value 600 600 2
Unit V
TC =25° C, tP =10 ms sinusoidal TC = 100 ° C, T j = 1 5 0 ° C, D...