SIC12C60
12A SiC Schottky Diode
■ Features
• Low Conduction and Switching Loss • Positive Temperature Coefficient on Vf • Temperature Independent Switching Behavior • Fast Reverse Recovery • High Surge Current Capability • Pb-free lead plating
■ Outline
■ Benefits
• Higher System Efficiency • Parallel Device Convenience • High Temperature Application • High Frequency Operation • Hard Switching & High Reliability • Environmental Protection
■ Applications
• SMPS • PFC • Solar/Wind Renewable Ene.
12A SiC Schottky Diode
SIC12C60
12A SiC Schottky Diode
■ Features
• Low Conduction and Switching Loss • Positive Temperature Coefficient on Vf • Temperature Independent Switching Behavior • Fast Reverse Recovery • High Surge Current Capability • Pb-free lead plating
■ Outline
■ Benefits
• Higher System Efficiency • Parallel Device Convenience • High Temperature Application • High Frequency Operation • Hard Switching & High Reliability • Environmental Protection
■ Applications
• SMPS • PFC • Solar/Wind Renewable Energy • Power Inverters • Motor Drives
12
Package TO-220-2L
12
Inner Circuit
■ Maximum ratings and electrical characteristics
Parameter
Conditions
Symbol
Marking code
Peak Repetitive Reverse Voltage Peak Reverse Surge Voltage DC Blocking Voltage Continuous Forward Current
Non-Repetitive Peak Forward surge current
Repetitive Peak Forward surge current Power Dissipation
TJ=25OC TJ=25OC TJ=25OC Tc=25OC Tc=135OC Tc=145OC Tc=25OC,Tp=10ms,Half Sine-Wa.