SI9803DY

Si9803DY Vishay Siliconix P-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS (V) –25 rDS(on) (W) 0.040 @ VGS = –4.5 V 0.060 @ VGS = –3.0 V ID (A) "5.9 "4.8 S S S SO-8 S S S G 1 2 3 4 Top View D D D D P-Channel MOSFET 8 7 6 5 D D D D G ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit –25 "12 "5.9 "4.7 "40 –2.1 2.5 Unit V A W 1.6 –55 to 150 _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. Document Number: 70638 S-49559—Rev. C, 11-Feb-98 www.vishay.com S FaxBack 408-970-5600 Symbol RthJA Limit 50 Unit _C/W 1 Si9803DY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward Transconductanceb Diode Forward Voltageb VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = –250 mA VDS = 0 V, VGS = "12 V VDS = –25 V, VGS = 0 V VDS = –25 V, VGS = 0 V, TJ = 70_C VDS v–5 V, VGS = –4.5 V VGS = –4.5 V, ID = –5.9 A VGS = –3.0 V, ID = –4.8 A VDS = –9 V, ID = –5.9 A IS = –2.1 A, VGS = 0 V –40 0.033 0.044 18...