SI9434DY

Si9434DY Siliconix P-Channel Enhancement-Mode MOSFET PRODUCT SUMMARY VDS (V) –20 RDS(ON) (W) 0.040 @ VGS = –4.5 V 0.060 @ VGS = –2.5 V ID (A) "6.4 "5.1 Recommended upgrade: Si9424DY S S S SO-8 S S S G 1 2 3 4 Top View D D D D P-Channel MOSFET 8 7 6 5 D D D D G ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)A Pulsed Drain Current Continuous Source Current (Diode Conduction)A Maximum Power Dissipation Dissi ationA Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C SYMBOL VDS VGS ID IDM IS PD TJ, Tstg LIMIT –20 "8 "6.4 "5.1 "10 –2.5 2.5 W 1.6 –55 to 150 _C A V UNIT THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-AmbientA Notes A. Surface Mounted on FR4 Board, t v 10 sec. Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70147. A SPICE Model data sheet is available for this product (FaxBack document #70528). Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 S Phone (408)988-8000 S FaxBack (408)970-5600 S www.siliconix.com S-56981—Rev. H, 15-Jun-98 Siliconix was formerly a division of TEMIC Semiconductors SYMBOL RthJA LIMIT 50 UNIT _C/W 1 Si9434DY Siliconix SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) PARAMETER STATIC SYMBOL TEST CONDITION MIN TYP MAX UNIT Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Curren...