SI9424BDY

Si9424BDY New Product Vishay Siliconix P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) -20 0.033 @ VGS = -2.5 V - 6.1 FEATURES ID (A) -7.1 rDS(on) (W) 0.025 @ VGS = -4.5 V D TrenchFETr Power MOSFET S SO-8 S S S G 1 2 3 4 Top View D P-Channel MOSFET 8 7 6 5 D D D D G ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C TA = 70_C ID -5.6 IDM IS -1.7 2.0 1.3 -55 to 150 -30 -1.0 1.25 0.8 W _C -4.5 A Symbol VDS VGS 10 secs Steady State -20 "9 Unit V - 7.1 -5.6 THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72015 S-21785—Rev. A, 07-Oct-02 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 50 80 30 Maximum 62.5 100 40 Unit _C/W 1 Si9424BDY Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "9 V VDS = -16 V, VGS = 0 V VDS = -16 V, VGS = ...